IXFH150N17T
32
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
31
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
31
R G = 2 ?
30
30
29
28
27
V GS = 10V
V DS = 85V
29
28
27
R G = 2 ?
V GS = 10V
V DS = 85V
T J = 25oC
26
26
25
24
23
22
I
D
= 37A
I
D
= 75A
25
24
23
T J = 125oC
21
20
22
21
25
35
45
55
65
75
85
95
105
115
125
35
40
45
50
55
60
65
70
75
80
85
90
95
100
T J - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
I D - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
50
34
38
95
45
40
35
30
t r t d(on) - ---
T J = 125oC, V GS = 10V
V DS = 85V
I D = 37A, 75A
32
30
28
26
36
34
32
30
28
t f t d(off) - ---
R G = 2 ? , V GS = 10V
V DS = 85V
I D = 75A
I D = 37A
90
85
80
75
70
26
65
25
24
24
60
20
15
22
20
22
20
55
50
2
3
4
5
6
7
8
9
10
25
35
45
55
65
75
85
95
105
115
125
R G - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
T J - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
38
95
110
240
36
34
T J = 125oC
t f t d(off) - ---
R G = 2 ? , V GS = 10V
V DS = 85V
90
85
100
90
t f t d(off) - ---
T J = 125oC, V GS = 10V
V DS = 85V
I D = 37A
220
200
32
80
80
180
30
T J = 25oC
75
70
160
28
26
T J = 25oC
70
65
60
50
I
D
= 75A
140
120
24
60
40
100
22
20
T J = 25oC
55
50
30
20
80
60
35
40
45
50
55
60
65
70
75
80
85
90
95 100
2
3
4
5
6
7
8
9
10
I D - Amperes
? 2008 IXYS CORPORATION, All rights reserved
R G - Ohms
IXYS REF: T_150N17T(8W)12-02-08-A
相关PDF资料
IXFH15N100P MOSFET N-CH 1000V 15A TO-247
IXFH15N80 MOSFET N-CH 800V 15A TO-247AD
IXFH160N15T2 MOSFET N-CH 150V 160A TO-247
IXFH160N15T MOSFET N-CH 150V 160A TO-247
IXFH16N90Q MOSFET N-CH 900V 16A TO-247
IXFH20N100P MOSFET N-CH 1000V 20A TO-247
IXFH20N60 MOSFET N-CH 600V 20A TO-247AD
IXFH22N55 MOSFET N-CH 550V 22A TO-247AD
相关代理商/技术参数
IXFH150N17T2 制造商:IXYS Corporation 功能描述:MOSFET N-CH 175V 150A TO-247
IXFH150N20T 功能描述:MOSFET Trench HiperFETs Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH15N100 功能描述:MOSFET 15 Amps 1000V 0.7 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH15N100 制造商:IXYS Corporation 功能描述:MOSFET N TO-247
IXFH15N100P 功能描述:MOSFET 15 Amps 1000V 0.76 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH15N100Q 功能描述:MOSFET 15 Amps 1000V 0.725 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH15N100Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH15N60 功能描述:MOSFET 15 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube